ELECTRON TRANSPORT AND THERMOELECTRIC PROPERTIES OF N-TYPE Bi1.75Sb0.25Te3

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Abstract
The Seebeck and Hall coefficients, the electrical and thermal conductivities, and the figure of merit, Z, have been measured as a function of dopant concentration of n-type CuBr-doped Bi1.75Sb0.25Te3. A maximum room-temperature value of Z = 2.65 × 10−3 °K−1 was obtained for a 0.08 wt % CuBr dopant concentration. The lattice thermal conductivity calculated by using exact statistics and assuming acoustic lattice scattering had a value of 0.011 W cm−1 °K−1. It was confirmed that each CuBr molecule donated a single electron to the conduction band and that about 2 × 1019 cm−3 residual acceptors were present in the alloys. The electron concentration and effective mass were independent of temperature between 100 and 300 °K and the effective mass was independent of carrier concentration between 5 and 60 × 1018 electrons cm−3. The conductivity mobility had a value of 480 cm2 volt−1 sec−1 at 300 °K which was independent of carrier concentration, and a T−3/2 temperature dependence between 100 °K and 300 °K.

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