C-band 20 watt internally matched GaAs based pseudomorphic HEMT power amplifiers
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A high linearity, high efficiency pseudomorphic HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 4 GHz high-power high-efficiency pseudomorphic power HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1990