GaInAs(P) based QWIPs on GaAs, InP, and Si substrates for focal plane arrays
- 1 January 2002
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 67 references indexed in Scilit:
- Significance of the first excited state position in quantum well infrared photodetectorsMicroelectronics Journal, 1999
- Electrical and optical characteristics of two color mid wave HgCdTe infrared detectorsApplied Physics Letters, 1999
- A four-color quantum well infrared photodetectorApplied Physics Letters, 1999
- Corrugated quantum well infrared photodetectors for normal incident light couplingApplied Physics Letters, 1996
- Metallic microstructures fabricated using photosensitive polyimide electroplating moldsJournal of Microelectromechanical Systems, 1993
- Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectorsApplied Physics Letters, 1991
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunnelingApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981