Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4S)
- https://doi.org/10.1143/jjap.35.2456
Abstract
An etching profile distortion called a “notch” was observed in Al alloy etching using inductively coupled plasma and electron cyclotron resonance plasma etcher. Mechanisms of notch formation and reduction were discussed. Electron charge up and the lowered electrical potential of the specific patterns are the reasons for the notch occurrence. Notches are smaller at the Al/Ti(O)N stacked structure. A new etching method is proposed for eliminating notches and achieving high selectivity employing an ICP etcher.Keywords
This publication has 2 references indexed in Scilit:
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1995
- Effect of inert ion bombardment on chemisorption and etching of aluminum films in Cl2, Br2, CCl4, and CBr4Journal of Vacuum Science & Technology A, 1985