Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygenElectronics Letters, 1983
- Formation of buried insulating layers in silicon by the implantation of high doses of oxygenNuclear Instruments and Methods in Physics Research, 1983
- Pulsed thermal annealing of ion-implanted siliconJournal of Applied Physics, 1983
- Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantationElectronics Letters, 1981
- C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into siliconElectronics Letters, 1978