Applications of X-Ray Triple Crystal Diffractometry to Studies on the Diffusion-Induced Defects in Silicon Crystals
- 16 August 1979
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 54 (2) , 701-706
- https://doi.org/10.1002/pssa.2210540235
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometerPhysica Status Solidi (a), 1979
- Röntgentopographische und röntgenmikroanalytische Untersuchungen zur Diffusion von Gold in SiliziumPhysica Status Solidi (a), 1971
- Gold-Induced Dislocation Loops in Silicon CrystalsJapanese Journal of Applied Physics, 1966
- Effect of Impurities on the Diffraction Curves of X-Rays from Dislocation-Free Silicon CrystalsJournal of the Physics Society Japan, 1966