Effect of Uniaxial Stress on Germanium p-n Junctions (II)
- 1 June 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (6) , 409-414
- https://doi.org/10.1143/jjap.4.409
Abstract
Uniaxial stress effect on germanium backward diodes has been studied. Stress-induced increase in forward current (I f ) with constant slope of ln I f vs V plots are explained by the model of Wortman et al. Band gap change with stress σ, d E g /dσ, is evaluated as 7.5×10-12 eV cm2/dyn. Stress-induced decrease in tunneling reverse current is interpreted on the basis of model that the effect of stress-induced decrease in tunneling carrier concentration exceeds that of increase in tunneling probability.Keywords
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