Observation of slow dangling-bond relaxation inp-type hydrogenated amorphous silicon
- 15 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (4) , 2173-2179
- https://doi.org/10.1103/physrevb.51.2173
Abstract
Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect D of p-type a-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the D defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials.Keywords
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