E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifiers
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A true enhancement mode device technology suitable for dual mode dual band power amplifier applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Greater than 70% PAE enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage currentPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003