Influence of carbon and hydrogen segregation on the electrical properties of grain boundaries in polycrystalline silicon sheets
- 31 August 1983
- journal article
- Published by Elsevier in Solar Cells
- Vol. 9 (3) , 149-157
- https://doi.org/10.1016/0379-6787(83)90041-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- General Theory of Phosphorus and Arsenic Diffusions in SiliconJapanese Journal of Applied Physics, 1980
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- L'autoradiographie à haute résolution en microscopie electronique appliquee à la metallurgieThe International Journal of Applied Radiation and Isotopes, 1973
- Diffusion along Small-Angle Grain Boundaries in SiliconPhysical Review B, 1961