Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors
- 26 August 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (9) , 1229-1231
- https://doi.org/10.1063/1.117420
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: