Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-x
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4A) , L555
- https://doi.org/10.1143/jjap.30.l555
Abstract
We report the growth and optical properties of a new strained-layer wide-band-gap single-quantum well (SQW): Zn1-y Cd y Se/ZnS x Se1-x . A SQW structure with four ZnCdSe wells of 1, 4, 8 and 12 monolayers (ML5) was grown on a GaAs substrate by metalorganic molecular beam epitaxy (MOMBE). The corresponding full widths at half-maximum (FWHMs) of 4.2 K photoluminescence peaks are 15.8, 18.2, 18.4 and 15.0 meV, respectively. These values are considerably small in spite of the high strain in well layers (about 2%), which are attributed to the well-defined structures of the SQW as confirmed by reflection high-energy electron diffraction (RHEED) in situ observation.Keywords
This publication has 13 references indexed in Scilit:
- Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE SystemJapanese Journal of Applied Physics, 1990
- Effects of (NH4)2Sx-Pretreatment of GaAs Surfaces on Properties of Epilayers and Heterointerfaces in Pseudomorphic ZnSe/GaAs Gown by MOMBEJapanese Journal of Applied Physics, 1990
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Optical properties of high-quality InAlAs/InGaAs SQWs grown by MBE using specially refined In and Al sourcesJournal of Crystal Growth, 1989
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Quantum confinement and strain effects in ZnSe-ZnSxSe1−x strained-layer superlatticesApplied Physics Letters, 1987
- Atomistic models of interface structures of GaAs-Al Ga1−As (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBEJournal of Crystal Growth, 1987
- Blue luminescence of a ZnSe-ZnS0.1Se0.9 strained-layer superlattice on a GaAs substrate grown by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1985
- Optical properties of ZnSe/(Zn,Mn)Se multiquantum wellsApplied Physics Letters, 1985
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion ElectronegativityPhysical Review Letters, 1976