Morphological degradation of TiSi2 on 〈100〉 silicon
- 9 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (23) , 1591-1593
- https://doi.org/10.1063/1.96826
Abstract
Evidence of instability of TiSi2 layers during high‐temperature high vacuum annealing has been observed. Rutherford backscattering and scanning electron microscopy measurements showed that at high vacuum annealing conditions, the laterally homogeneous silicide layer breaks up into islands. In between these TiSi2 islands, growth of an epitaxial silicon layer was observed.Keywords
This publication has 7 references indexed in Scilit:
- Interaction of TiSi2 layers with polycrystalline SiApplied Physics Letters, 1986
- Formation and thermal stability of CoSi2 on polycrystalline SiJournal of Applied Physics, 1985
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Platinum diffusion into silicon from PtSiApplied Physics Letters, 1983
- Study of the uniformity and stoichiometry of CoSi2 films using Rutherford backscattering spectroscopy and scanning electron microscopyApplied Physics Letters, 1983
- Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on SiJournal of Applied Physics, 1979
- Thermal stability of thin PtSi films on silicon substratesJournal of Applied Physics, 1972