Planar Hall effect in heavy dopedn-InSb and its influence on the measurement of magnetic field components with Hall generators at 4·2°K
- 28 February 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (2) , 219-227
- https://doi.org/10.1016/0038-1101(70)90054-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A Hall effect device for measuring the magnitude and direction of a magnetic field at 4°KSolid-State Electronics, 1966
- Measurement of magnetic fields at low temperatures using Hall generatorsCryogenics, 1966
- Die galvanomagnetischen eigenschaften von InSb bei hohen magnetfeldernSolid-State Electronics, 1962
- Galvanomagnetic Effects in-Type Indium AntimonidePhysical Review B, 1957
- ON THE THEORY OF THE HALL EFFECTCanadian Journal of Physics, 1951