Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 /spl mu/m gates
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We have optimized the layer structure and the width of lateral gate recess in lattice matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) to reduce the output conductance and kink-effect. Very low output conductances less than 30 mS/mm lead to excellent f/sub max/-values (maximum stable gain) of more than 320 GHz for gate lengths of 0.51 /spl mu/m.Keywords
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