Multiple-Phonon Resonant Raman Scattering in CdS
- 14 April 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 22 (15) , 780-782
- https://doi.org/10.1103/physrevlett.22.780
Abstract
We have observed nth order () Raman scattering in CdS under conditions of resonance between the laser frequency and the band gap or the associated exciton states. The frequency spectrum of these higher order processes demonstrates that the phonons involved are localized within a small volume of space centered at . We believe that such spectral features are characteristic of direct-gap resonant scattering, and the kinematics of their production is discussed.
Keywords
This publication has 6 references indexed in Scilit:
- Resonant Surface Raman Scattering in Direct-Gap SemiconductorsPhysical Review Letters, 1969
- Energy-Dependent Capture Cross Sections and the Photoluminescence Excitation Spectra of Gallium Phosphide above the Threshold for Intrinsic Interband AbsorptionPhysical Review B, 1968
- Theory of Lattice Raman Scattering in InsulatorsPhysical Review B, 1967
- Lattice Dynamics of Wurtzite: CdSPhysical Review B, 1967
- Theory of the resonance Raman effect in crystalsJournal de Physique, 1965
- The Raman effect in crystalsAdvances in Physics, 1964