Tunneling properties of single crystal Nb/Nb2O5/Pb Josephson junctions
- 15 October 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8) , 794-796
- https://doi.org/10.1063/1.94458
Abstract
Preparation of high quality single crystal Nb tunnel junctions based on Nb/Nb2O5/Pb structures is reported. Vm values of 30±10 mV were obtained. The average specific capacitance of these junctions is 0.020±0.002 pF/μm2. From measurements of the oxidation rate, the conductance at high voltage bias, and observations of the tunneling behavior, we show that some characteristics previously associated with oxidized niobium barriers are not intrinsic and are significantly improved when the underlying niobium film is single crystal.Keywords
This publication has 17 references indexed in Scilit:
- Structure of a Nb oxide tunnel barrier in a Josephson junctionJournal of Applied Physics, 1982
- On resonant tunnelingSurface Science, 1982
- Modification of tunneling barriers on Nb by a few monolayers of AlPhysical Review B, 1981
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981
- Some properties of Nb-Nb2O5-Pb(In) Josephson tunnel junctions for devices applicationsIEEE Transactions on Magnetics, 1981
- XPS and AES studies on oxide growth and oxide coatings on niobiumJournal of Applied Physics, 1980
- A resolution of the controversy on tunneling in NbPhysics Letters A, 1978
- Thin-Film Josephson Junctions Using Getter-Sputtered NiobiumJournal of Applied Physics, 1969
- Frequency Dependence of the Skin Depth in Superconducting TinJournal of Applied Physics, 1969
- Superconducting Tunneling on Bulk NiobiumPhysical Review Letters, 1961