Forming process in evaporated SiO thin films
- 1 November 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 16 (143) , 1049-1061
- https://doi.org/10.1080/14786436708229693
Abstract
A forming process is examined that is found to occur in evaporated SiO thin films. The manner in which the forming process is influenced by temperature, SiO thickness, gaseous atomosphere, electrode material and applied voltage is described. A model of the forming process is presented, assuming the process is the injection of ions into the SiO network.Keywords
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