Injection traveling-wave laser amplifier based on a (GaAI)As double heterostructure
- 28 February 1984
- journal article
- Published by IOP Publishing in Soviet Journal of Quantum Electronics
- Vol. 14 (2) , 255-259
- https://doi.org/10.1070/qe1984v014n02abeh004857
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Spectral gain profile of a GaAlAs injection heterolaserSoviet Journal of Quantum Electronics, 1983
- Matching of single-mode optical waveguides to semiconductor lasersSoviet Journal of Quantum Electronics, 1982
- Determination of the parameters of injection laser amplifiers based on GaAlAs heterostructures from superluminescence characteristicsSoviet Journal of Quantum Electronics, 1982
- Dynamic characteristics of a GaAs injection amplifierSoviet Journal of Quantum Electronics, 1981
- Steady-state characteristics of a GaAs injection quantum amplifier receiving a narrow-band input signalSoviet Journal of Quantum Electronics, 1980
- Transmission of light pulses by a two-component semiconductor mediumSoviet Journal of Quantum Electronics, 1972