Experimental results on submicron-size p-channel MOSFET's

1 February 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (2) , 34-37
https://doi.org/10.1109/EDL.1982.25468

Abstract

We report results on p-channel MOSFET's with channel lengths as small as 0.5 µm. Using design criteria obtained from numerical simulation, the devices have been fabricated by a low temperature process with very short annealing times. Fabricated devices with submicron channel lengths are dominated by velocity saturation of holes. Comparing the drive capability of n- and p-channel devices, we find the intrinsic device currents to be within a factor of 1.4 for a channel length of 0.5 µm.

Keywords

PLASMA TEMPERATURE
ANNEALING
ETCHING
BORON
IMPLANTS
VERY LARGE SCALE INTEGRATION
CIRCUITS
X-RAY LITHOGRAPHY
PLASMA APPLICATIONS
PLASMA MEASUREMENTS

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