Photodissolution of Silver in AmorphousFilms
- 7 September 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (10) , 726-729
- https://doi.org/10.1103/physrevlett.47.726
Abstract
Analysis of published spectral data shows that the photons relevant to photodissolution of metals in amorphous chalcogenide semiconductors are absorbed in the metal and not in the semiconductor. It is argued that light does not enhance the diffusion of metal atoms in the chalcogenide matrix, but triggers a solid-state chemical reaction at the metal-semiconductor interface. A new amorphous phase in the Ag-As-S system, , is postulated to explain the peculiar physical and chemical properties of the new photogenerated material.
Keywords
This publication has 7 references indexed in Scilit:
- Angstroms Resolution in Se-Ge Inorganic PhotoresistsJapanese Journal of Applied Physics, 1981
- Photo-enhanced diffusion of Ag in amorphous Ge2S3 filmsSolid State Communications, 1979
- A dry-etched inorganic resistApplied Physics Letters, 1978
- The kinetics of photodissolution of silver in amorphous As2S3 FilmsPhysica Status Solidi (a), 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- The kinetics of photodissolution of Ag in amorphous As2S3 filmsJournal of Non-Crystalline Solids, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975