GaAs Hall-effect devices fabricated by ion-implantation technique

3 August 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (16) , 503-505
https://doi.org/10.1049/el:19780338

Abstract

Gallium-arsenide Hall-effect devices were developed by using Se-implanted n layers. A Hall voltage of 85 mV was generated at I = 1 mA and B = 5 kgauss. The imbalance voltage appearing was below 1.4 mV at I = 1 mA and B = 0.This fabrication technique is very promising in the high throughput of GaAs Hall-device production.

Keywords

SE IMPLANTED N LAYERS
FABRICATION
GAAS HALL EFFECT DEVICES
1.4 MV IMBALANCE VOLTAGE AT 1 MA
0 GAUSS
85 MV HALL VOLTAGE AT 1 MA
5 KGAUSS
ION IMPLANTATION

This publication has 0 references indexed in Scilit: