Magnetic field dependence of hot-electron transport in GaAs
- 1 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9) , 964-966
- https://doi.org/10.1063/1.95945
Abstract
We have studied the magnetic field dependence of hot-electron spectra using hot-electron spectroscopy. It is shown that application of a magnetic field normal to the injection direction has a dramatic effect on the spectra whereas a magnetic field applied parallel to the injection direction has no effect. The magnetic field is shown to increase the effective transit region width of the spectrometer enabling us to deduce a scattering rate for hot electrons that is at least four times greater than would be expected considering phonon emission alone.Keywords
This publication has 3 references indexed in Scilit:
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- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980
- Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductorsPhysical Review B, 1978