Electrically-alterable memory using a dual electron injector structure

1 September 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (9) , 179-181
https://doi.org/10.1109/edl.1980.25279

Abstract

A novel type of electrically-alterable memory which uses the phenomenon of enhanced electron injection into SiO2from Si-rich SiO2to charge or discharge a floating polycrystalline Si storage layer in a metal-oxide-semiconductor field-effect-transistor is described. This non-volatile memory differs from others using floating polycrystalline Si in the charging or discharging process. This improvement is accomplished by using a chemically-vapor-deposited stack of Si-rich-SiO2-SiO2-Si-rich-SiO2between the floating polycrystalline Si layer and the control gate electrode. This device is capable of being written or erased in 5 msec at voltages of ≤ 16 V and in 2 µsec at voltages ≤ 23 V with excellent charge retention.

Keywords

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