High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs
Top Cited Papers
- 30 October 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 54 (11) , 3848-3856
- https://doi.org/10.1109/tmtt.2006.884685
Abstract
A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity. For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages. For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier. The linearity of overall system is enhanced by digital pre-distortion. The measured average power-added efficiency of the amplifier is as high as 50.7% for a W-CDMA modulated signal with peak-to-average power ratio of 7.67 dB at an average output power of 37.2 W and gain of 10.0 dB. We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA. The measured error vector magnitude is as low as 1.74% with adjacent channel leakage ratio of -51.0 dBc at an offset frequency of 5 MHzKeywords
This publication has 10 references indexed in Scilit:
- An Improved Power-Added Efficiency 19-dBm Hybrid Envelope Elimination and Restoration Power Amplifier for 802.11g WLAN ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2006
- High Efficiency Envelope Tracking LDMOS Power Amplifier for W-CDMAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- 150 W GaN-on-Si RF Power TransistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applicationsIEEE Transactions on Microwave Theory and Techniques, 2005
- 50% PAE WCDMA basestation amplifier implemented with GaN HFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Nonlinear Device Model of Microwave Power GaN HEMTs for High Power-Amplifier DesignIEEE Transactions on Microwave Theory and Techniques, 2004
- A 28V 250W GaAs power FET with high gain of 15.5 dB for W-CDMA base stationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- EER architecture specifications for OFDM transmitter using a class E amplifierIEEE Microwave and Wireless Components Letters, 2004
- A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Intermodulation distortion in Kahn-technique transmittersIEEE Transactions on Microwave Theory and Techniques, 1996