The Effect of Dislocations on the Electron Mobility of GaAs
- 16 December 1982
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 74 (2) , 493-496
- https://doi.org/10.1002/pssa.2210740215
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A study of geometrie magnetoresistance in transferred electron diodes using a numerical solution of the boltzmann equationPhysica Status Solidi (a), 1982
- Dislocation states in gallium arsenidePhilosophical Magazine Part B, 1979
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Electron Mobility in Direct-Gap Polar SemiconductorsPhysical Review B, 1970
- Effect of dislocations on galvanomagnetic properties ofn-Type GeActa Physica Academiae Scientiarum Hungaricae, 1967