The Effect of Phosphorus Doping on Tin Oxide Films Made by the Oxidation of Phosphine and Tetramethyltin: II . Electrical Properties
- 1 July 1980
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 127 (7) , 1595-1599
- https://doi.org/10.1149/1.2129959
Abstract
[[abstract]]For pt.I see ibid., vol.127, no.7, p.1592 (1980). The electrical properties of tin oxide films have been measured as a function of phosphorus doping. It is shown that the electron concentration increases monotonically with phosphorus doping, with about 7.7% of the incorporated phosphorus being active. An oxygen deficiency is also present in these films, and is found to be about 0.1 eV below the conduction bandedge. The mobility increases with phosphorus doping to a maximum of 26 cm2/V sec, and then falls off with further doping, as the film undergoes a crystalline to amorphous transition. Film behavior in these two regimes can be explained by the established theories for current transport in polycrystalline and amorphous films, respectively[[fileno]]2030118010006[[department]]電機工程學This publication has 0 references indexed in Scilit: