TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self-aligned gate field-effect transistor fabrication
- 1 November 1987
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 5 (6) , 1701-1706
- https://doi.org/10.1116/1.583651