Polysilyne thin films as resists for deep ultraviolet lithography

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Abstract
A new class of organosilane polymers, the polysilynes, have been examined as resist materials for deep ultraviolet lithography. These polymers have the formula [SiR]n, and polymers with R=n-propyl, n-butyl, isobutyl, amyl, cyclohexyl, and phenyl have been examined. Photolysis of polysilyne films with 193, 215, or 254 nm light results in the formation of an organosiloxane. Latent images of this oxidized material can be selectively developed yielding a negative tone image either by wet development in toluene or dry development in a Cl2 or HBr plasma. The best sensitivities at 193 nm were 20 mJ/cm2 for wet developed poly(n-butylsilyne) and 200 mJ/cm2 for dry developed poly(phenylsilyne). Positive tone wet development in polar solvents, such as acetone, is incomplete and yields a thin, insoluble residue layer.
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