Tunneling relaxation time measurements in thin oxide metal oxide semiconductor capacitors
- 15 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (8) , 734-735
- https://doi.org/10.1063/1.93209
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- Frequency response of Si–SiO2 interface states on thin oxide MOS capacitorsPhysica Status Solidi (a), 1972
- TUNNELING INTO INTERFACE STATES OF MOS STRUCTURESApplied Physics Letters, 1967