Sputtering at Low Ion Velocities
- 1 June 1954
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 25 (6) , 698-702
- https://doi.org/10.1063/1.1721719
Abstract
Low sputtering rates are measured by means of the probe technique in a plasma. The displacement of the probe curve along the voltage axis (and its change in shape) when the probe is covered with a material of different work function, sputtered from a sputtering electrode, is a dependable measure for the thickness of the sputtered layer. The method is very sensitive, generally applicable, and was applied especially to answer the question of a threshold voltage U0 for sputtering. The sputtering rate for Pt in Xe, in the region of low ion energies (50<UsUs−U0)2 with U0=40 ev.This publication has 2 references indexed in Scilit:
- Reliability of Probe Measurements in Hot Cathode Gas DiodesJournal of Applied Physics, 1952
- Über die Kathodenzerstäubung bei schiefem Aufparall der IonenThe European Physical Journal A, 1942