DIFFUSION OF GALLIUM IN GERMANIUM ALONG DISLOCATIONS

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Abstract
Diffusion of gallium in germanium was investigated in samples containing a dislocation density of 1.5x106 to 3x107 cm-2, at temperatures of 680°C and 710°C. The concentration profiles were obtained by means of SIMS. For the volume diffusion an activation energy of Q = 3.5 eV ± 0.3 eV and a pre-factor of Do ≈ 1.5x103 cm2/s is found. For etch pit densities larger than 3x106 cm-2 we observe the characteristic tails due to pipe diffusion wich are linear on an ln c-x - scale. The results have been analyzed in terms of a phenomenological model of the dislocation and the analytical solution given by Mimkes /7/. The pipe radius a and the ratio Ɗ of the diffusion coefficient in the pipe D' to that in the volume D are determined independently

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