Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions

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Abstract
Ion-milling Auger electron spectroscopy has been used to study the depth profiles at the AlxGa1−xAs–GaAs interface and the Au–AlxGa1−xAs interface. Studies were made of ’’abrupt’’ and intentionally ’’graded’’ growth LPE AlxGa1−xAs–GaAs heterojunctions grown on the (100) face of GaAs. The ’’abrupt’’ growth AlxGa1−xAs–GaAs interfaces were found to be graded with an interface width of 100–130 Å. The depth profiles of two intentionally ’’graded’’ AlxGa1−xAs–GaAs heterojunctions revealed the interface widths to be ∠525 Å and ∠1500 Å for samples produced by a new technique. The studies of the Au–AlxGa1−xAs interface revealed an oxide layer to be present in the interface for samples which had been chemically etched prior to deposition of the Au. This oxide layer was found to be thicker than the native oxide on AlxGa1−xAs which had not been etched.

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