CW Spectroscopy Of Ultrafast Relaxation In Semiconductor Heterostructures

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Abstract
Steady state hot luminescence measurements can be used to determine hot carrier distributions and relaxation rates for extremely fast processes with low injected carrier densities. Luminescence gives a direct measure of the distribution of hot carriers in a semiconductor. We discuss experiments which probe the distribution of electrons high in the conduction band. These measurements have been used in GaAs to determine the LO phonon emission time by a hot electron(100 fs), the F to L intervalley scattering rate (250 fs for an electron initially about 70 meV above the bottom of the L-valleys), and the r to X intervalley scattering rate (30 fs for an electron about 85 meV above the bottom of the X-valleys). Recent experiments which measure the relaxation of hot electrons in the presence of a high density of cold electrons in bulk GaAs and GaAs quantum wells are presented.

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