Carrier multiplication in the pinchoff region of m.o.s. transistors
- 25 March 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (5-6) , 118-120
- https://doi.org/10.1049/el:19710078
Abstract
The letter describes a theoretical model for the abnormal current in the substrate of m.o.s. transistors beyond pinchoff. It is shown that this current is due to carrier multiplying by avalanching in the pinchoff region. The corresponding drain conductance is determined. The comparison between experimental and theoretical results is given for several samples.Keywords
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