MNOS LSI memory device data retention measurements and projections
- 1 May 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (5) , 568-577
- https://doi.org/10.1109/t-ed.1977.18780
Abstract
The retention characteristics of an MNOS LSI memory device are interpreted from the properties of its basic MNOS transistor. A technique is developed for measuring and predicting retention properties of large quantity device lots. A production lot test method for determining the 10 000-h data retention properties of LSI memory devices is proposed. Also included in the paper are measured failure rates, identifying the retention failures and reliability for a specific LSI memory device.Keywords
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