Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 2836-2839
- https://doi.org/10.1116/1.589739
Abstract
No abstract availableKeywords
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