Dielectric Resonator Oscillators at 4, 6, and 11 GHz

23 March 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 86 (0149645X) , 87-90
https://doi.org/10.1109/mwsym.1986.1132116

Abstract

The microwave circuit used in this paper permits the use of the same power transistor at 4, 6, and 11 GHz. The phase noise of these units at 10 kHz from the carrier in a 1-Hz bandwidth is -116 dBc/Hz at 4 GHz, -113 dBc/Hz at 6 GHz, and -100 dBc/Hz at 11 GHz.

Keywords

DIELECTRICS
OSCILLATORS
FREQUENCY
STABILITY
BIT ERROR RATE
CIRCUITS
FETS
PHASE NOISE
TEMPERATURE DISTRIBUTION
SIGNAL DETECTION

This publication has 1 reference indexed in Scilit:

Low Noise Design of Dielectric Resonator FET Oscillators
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1983