Laterally driven polysilicon resonant microstructures
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Interdigitated finger (comb) structures are demonstrated to be effective for electrostatically exciting the resonance of polysilicon microstructures parallel to the plane of the substrate. Linear plates suspended by a folded-cantilever truss and torsional plates suspended by spiral and serpentine springs are fabricated from a 2- mu m-thick phosphorus-doped low-pressure chemical vapor deposited polysilicon film. Resonance is observed visually, with frequencies ranging from 18 kHz to 80 kHz and quality factors from 20 to 130. Simple beam theory is adequate for calculating the resonant frequencies, using a Young's modulus of 140 GPa and neglecting residual strain in the released structures.Keywords
This publication has 9 references indexed in Scilit:
- Resonant-structure micromotorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Surface-micromachining processes for electrostatic microactuator fabricationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Characterization of the mechanisms producing bending moments in polysilicon micro-cantilever beams by interferometric deflection measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Design and calibration of a microfabricated floating-element shear-stress sensorIEEE Transactions on Electron Devices, 1988
- Resonant-microbridge vapor sensorIEEE Transactions on Electron Devices, 1986
- A simple technique for the determination of mechanical strain in thin films with applications to polysiliconJournal of Applied Physics, 1985
- Resonator sensors-a reviewJournal of Physics E: Scientific Instruments, 1985
- Etched silicon vibrating sensorJournal of Physics E: Scientific Instruments, 1984
- Practical Considerations for Miniature Quartz Resonator Force TransducersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983