Simultaneous Determination of Surface Potential and Excess Carrier Concentration with the Pulsed Surface Photovoltage Method
- 16 May 1993
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 137 (1) , K29-K32
- https://doi.org/10.1002/pssa.2211370133
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Effect of surface recombination and injection level on the diffusion length obtained by simulation of the SPV methodSemiconductor Science and Technology, 1992
- Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulsesJournal of Physics D: Applied Physics, 1979
- Determination of surface properties by means of large signal photovoltage pulses and the influence of trappingSurface Science, 1974
- Surface-state density and surface potential in MIS capacitors by surface photovoltage measurements. IJournal of Physics D: Applied Physics, 1971
- A Method for the Measurement of Short Minority Carrier Diffusion Lengths in SemiconductorsJournal of Applied Physics, 1961
- Large-Signal Surface Photovoltage Studies with GermaniumPhysical Review B, 1958