Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface
- 10 December 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (25-26) , 941-942
- https://doi.org/10.1049/el:19810658
Abstract
Inversion-mode InP MISFETs with a thermally oxidised InP/InP interface have been fabricated. The devices exhibit fairly stabilised drain-current/time characteristics compared with those of the conventional devices reported so far. The MIS interface properties are also discussed.Keywords
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