The Role of an Interface Misfit Dislocation in Blocking the Glide of a Threading Dislocation in a Strained Epitaxial Layer
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Dislocation nucleation near the critical thickness in GeSi/Si strained layersPhilosophical Magazine A, 1989
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- I n s i t u observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructuresApplied Physics Letters, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970