Oscillatory Surface In-Plane Lattice Spacing during Growth of Co and of Cu on a Cu(001) Single Crystal

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Abstract
The in-plane lattice spacing during epitaxial growth of Co and of Cu on a Cu(001) single crystal substrate has been investigated in the pseudomorphic growth regime by an advanced reflection high energy electron diffraction system with improved lateral resolution. The in-plane lattice spacing of the surface is found to oscillate as a function of coverage. For Co/Cu(001) the growing Co monolayers are periodically contracted for half-integer coverages, whereas for the case of Cu/Cu(001) homoepitaxy we find periodic expansions for half-integer coverages.