A theory of the Hooge parameters of solid-state devices

1 March 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (3) , 667-671
https://doi.org/10.1109/t-ed.1985.21996

Abstract

Handel's theory of quantum 1/f noise is applied to the Hooge parameters of bipolar transistors and various types of FET's. Very low values for the Hooge parameters αHnand αHpfor electrons and holes are obtained. For several cases the experimental data seem to agree with the predicted theoretical limit whereas in other cases the mobility 1/f noise is masked by other noise sources. In good GaAs devices the predicted quantum limit for αHnis reached within a factor 5-10. The theory is also applied to the Hg1-xCdxTe materials and devices. Because of the very low effective masses involved, the theory predicts values as high as 2 × 10^-4-2 × 10^-5, depending onx. What remains presently unexplained are the high values of αHfor semiconductor resistors and long p-n diodes.

Keywords

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