Comparative frequency behavior of GaAs, InP, and GaInAs transferred electron devices—Derivation of a simple comparative criterion

1 March 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (3) , 341-343
https://doi.org/10.1109/t-ed.1981.20337

Abstract

A comparison between the intrinsic frequency dependence of transferred electron effects in GaAs, InP, and GaInAs is presented. A simple, comparative, criterion is then derived on the basis of phenomenological Considerations.

Keywords

FREQUENCY RESPONSE
GALLIUM ARSENIDE
RADIO FREQUENCY
SEMICONDUCTOR DEVICES
STEADY STATE
CUTOFF FREQUENCY
MATHEMATICAL MODEL
ELECTRON MOBILITY
MILLIMETER WAVE
MONTE CARLO METHODS
FIGURE OF MERIT
ENERGY BALANCE

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