Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures

This publication has 18 references indexed in Scilit:

• Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry
  Japanese Journal of Applied Physics, 2000
• Optical band gap dependence on composition and thickness of InxGa1−xN (0<x<0.25) grown on GaN
  Applied Physics Letters, 1999
• Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
  Applied Physics Letters, 1999
• Measurement of gain current relations for InGaN multiple quantum wells
  Applied Physics Letters, 1998
• Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser
  Applied Physics Letters, 1998
• Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia
  Journal of Applied Physics, 1998
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
  Applied Physics Letters, 1998
• Bowing parameters for zinc-blende Al1−xGaxN and Ga1−xInxN
  Applied Physics Letters, 1995
• Thermally detected optical absorption and photoluminescence in a GaAs/GaAlAs multiquantum well sample
  Semiconductor Science and Technology, 1993
• First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy
  Semiconductor Science and Technology, 1993