Forward and reverse characteristics of self-aligned double-diffused m.o.s. transistors
- 7 September 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (18) , 463-465
- https://doi.org/10.1049/el:19720334
Abstract
This letter discusses the properties of, and the fabrication process for, a new etched self-aligned-gate double-diffused m.o.s. transistor. Device characteristics in both the forward and reverse modes of operation are discussed in terms of a simple physical model of internal behaviour.Keywords
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