Electron and Ion Beam-Enhanced Adhesion
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Helium ions of 2 MeV energy and electrons of 5 to 30 keV energy have been used to irradiate a variety of thin (10–330 nm) metal films after deposition on semiconductor and insulator substrates. Dose thresholds for increased adhesion were found following irradiation with either type of particle. It is argued that the stronger bonding arises from an electronic, rather than a collisional, process. Representative results are presented and discussed within the framework of a recent model for heavy ion-induced effects.Keywords
This publication has 10 references indexed in Scilit:
- Electronic excitation in electron bombardment enhancement of chemical reactionsApplied Physics Letters, 1983
- Ion-beam-enhanced adhesion in the electronic stopping regionNuclear Instruments and Methods in Physics Research, 1982
- The effect of ion bombardment on stress and adhesion in thin films of silver and aluminumThin Solid Films, 1981
- Metastable Au-Si alloy formation induced by ion-beam interface mixingPhilosophical Magazine A, 1981
- Ion beam exposure characteristics of resistsJournal of Vacuum Science and Technology, 1979
- Ion projection system for IC productionJournal of Vacuum Science and Technology, 1979
- Thin film metallization of oxides in microelectronicsThin Solid Films, 1973
- Measurement of adhesion of thin evaporated films on glass substrates by means of the direct pull methodThin Solid Films, 1973
- Effect of ion bombardment on the adhesion of aluminium films on glassThin Solid Films, 1969
- Measurement of adhesion of thin filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1960