Gigahertz Electron Spin Manipulation Using Voltage-Controlled g-Tensor Modulation
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- 21 February 2003
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 299 (5610) , 1201-1204
- https://doi.org/10.1126/science.1080880
Abstract
We present a scheme that enables gigahertz-bandwidth three-dimensional control of electron spins in a semiconductor heterostructure with the use of a single voltage signal. Microwave modulation of the Landé g tensor produces frequency-modulated electron spin precession. Driving at the Larmor frequency results in g-tensor modulation resonance, which is functionally equivalent to electron spin resonance but without the use of time-dependent magnetic fields. These results provide proof of the concept that quantum spin information can be locally manipulated with the use of high-speed electrical circuits.Keywords
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