Ferroelectrics for non-volatile memories
- 1 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 245-252
- https://doi.org/10.1016/0167-9317(92)90431-p
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- SrTiO3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric PropertiesJapanese Journal of Applied Physics, 1991
- Preparation and ferroelectric properties of PbZr0.53Ti0.47O3 thin films by spin coating and metalorganic decompositionJournal of Applied Physics, 1991
- Nanosecond switching of thin ferroelectric filmsApplied Physics Letters, 1991
- Radiation damage in ferroelectric thin-film memoriesFerroelectrics, 1991
- Barrier layers for realization of high capacitance density in SrTiO3 thin-film capacitor on siliconApplied Physics Letters, 1990
- Processing and parameters of sol-gel PZT thin-films for GaAs memory applicationsFerroelectrics, 1990
- Ferroelectronic ram memory family for critical data storageFerroelectrics, 1990
- Ferroelectric Film Synthesis, Past and Present: A Select ReviewMRS Proceedings, 1990
- Radiation effects on ferroelectric thin-film memories: Retention failure mechanismsJournal of Applied Physics, 1989
- Preparation of ferroelectric PZT films by thermal decomposition of organometallic compoundsJournal of Materials Science, 1984